IRFP A, V, Ohm, N-Channel Power. MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced. IRFP A, V, Ohm, N-channel Power MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced. IRFP, SiHFP Vishay Siliconix. FEATURES. • Dynamic dV/dt Rating. • Repetitive Avalanche Rated. • Isolated Central Mounting Hole.
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Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body.
IRFP MOSFET N-CH V A TOAC Vishay IR datasheet pdf data sheet FREE from
Drain Current Current regulator Same type as D. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. Case Temperature tr td off tf Fig.
Contour of slot optional. Please contact authorized Vishay personnel to obtain written terms irfp4400 conditions regarding products designed for such applications.
Mold flash shall not exceed 0. Thermal pad contour optional with dimensions D1 and E1.
Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations.
Lead finish uncontrolled in L1.
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IRFP, SiHFP Datasheet
Repetitive rating; pulse width limited by maximum junction temperature see fig. Products may be manufactured at one of several qualified locations. Product names and markings noted herein may be trademarks of their respective owners. Such statements are not binding statements about the suitability of products for a particular application.
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B, Mar This datasheet is subject to change without notice.